A New “Critical-Current at Linear-Threshold” Method for Direct Extraction of Deep-Submicron MOSFET Effective Channel Length
نویسندگان
چکیده
A novel method for direct extraction of deep-submicron MOSFET effective channel length is proposed, which requires only a single measurement of the “critical-current at linear-threshold” (“Icrit @ Vt0”) based on the maximum-gm definition. With a simple calibration of the channel sheet resistance from the long-channel Icrit data, the effective channel length of any short-channel device on the same wafer can be determined with one measurement of Icrit @ Vt0: Meanwhile, an averaged (modeled) effective channel length can be obtained from the same data set with a simple algorithm, which can be used for device/circuit modeling.
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